Description
Survey of technology used in silicon VLSI integrated circuit fabrication. Crystal growth and crystal defects, oxidation, diffusion, ion implantation and annealing, gettering, CVD, etching, materials for metallization and contacting, and photolithography. Structures and fabrication techniques required for submicron MOSFETs. Applications in advanced CMOS processes.
Prerequisites
- Prerequisite(s): enrolment in the M.Eng.- Engineering Practice program.
Conditions and arrangements
- Prerequisite(s): enrolment in the M.Eng.- Engineering Practice program.
Reference text in its original language
Survey of technology used in silicon VLSI integrated circuit fabrication. Crystal growth and crystal defects, oxidation, diffusion, ion implantation and annealing, gettering, CVD, etching, materials for metallization and contacting, and photolithography. Structures and fabrication techniques required for submicron MOSFETs. Applications in advanced CMOS processes.
- Prerequisite(s): enrolment in the M.Eng.- Engineering Practice program.
Sources and references
Dates and sources are retained to help you verify the information. Translations are provided to facilitate reading; the official source governs conditions and requirements.
Source reference : https://calendar.carleton.ca/grad/courses/EGEN/